DESCRIPTION
The UTC 100V N-Channel enhancement mode power field
effect transistors(MOSFET) are produced by UTC!ˉs planar stripe,
DMOS technology which has been tailored especially in the
avalanche and commutation mode to minimize on-state resistance,
provide superior switching performance, and withstand high energy
pulse. They are suited for low voltage applications such as audio
amplifier,high efficiency switching DC/DC converters, and DC motor
control.   FEATURES
* R  = 0.1 @V  = 10 V
DS(ON) GS
* Ultra low gate charge ( typical 19nC ) 
* Low reverse transfer Capacitance ( C= typical 32pF )RSS
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness