The SEL533-03 is GaAs infrared emitting diode that is designedfor high power, low forward voltage and high speed rise / fall time.This device is optimized for speed and efficiency at emissionwavelength 940nm and has a high radient efficiency over a widerange of forward current.
Features:
• 940nm wavelength
• Low forward voltage
• High power and high reliability
• Available for pulse operating
Application:
• IR Audio and Telephone
• Communication
• Optical Switch
• Smoke Sensor
• Touch Screen

SST533R-03 is a high sensitivity NPN siliconphototransistor mounted in a Φ3 plastic packageIt is compact and easy to mount.
Features
·High output
·Small Size (Φ3mm)
·Visible ray cut off
·RoHS Compliance
Application
·Photointerrupters
·Optical detectors
·Optical counters