FJP13009
High Voltage Fast-Switching NPN Power Transistor
•High Voltage Capability
•High Switching Speed
•Suitable for Electronic Ballast and Switching Mode Power Supply
Absolute Maximum Ratings* TC = 25°C unless otherwise noted (notes_1)
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Package Marking and Ordering Information
Notes_2 :
1) The Affix “-H2” means the hFE classification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website 
                                                
VCBO (Collector-Base Voltage)       700 V
VCEO (Collector-Emitter Voltage)    400 V
VEBO (Emitter-Base Voltage)           9  V
IC (Collector Current (DC))            12  A
ICP (Collector Current (Pulse))      24  A
IB  (Base Current)   6 A
PC (Collector Dissipation (TC = 25°C))  130 W
TJ (Junction Temperature)  150  °C
TSTG (Storage Temperature Range)  -65 ~ 150 °C