供应810NM贴片5050 红外发射管/nm infrared doide
价格:电议
地区:广东 深圳市
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5050 810nm infrared doide

 

 

 

 

应用prications

电子设备的指示和背光

directives and backlight for Electronic products

各类光源应用

Light pipe application.

生长灯

Grow light

光电设备的信号传输

signal transmission of Photoelectric equipment

医疗设备

Medical equipment

 

 

   Absolute Maximum Rating            (Ta=25)

Item

Symbol

Value

Unit

DC forward current

IF

150

mA

Pulse forward current

IFP

300

mA

Power dissipation

PD

300

mW

Operating temperature

Topr

-40~+85

Storage temperature

Ystg

-40~+80

Reverse voltage

VR

5

V

Sold soldering temperature

Tsol

260/3Sec

---

Plus with Max 10ms,duty ratio max1/00

 

 

 

Electro-Optical Characteristics

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Forward Voltage

UF

IF = 60 mA

 

1.6

1.9

v

Forward Voltage *

UF

IF = 150 mA

 

1.7

 

v

DC reverse Current

IR

V=5V

  

10

μA

Radiation power

Po

IF = 60 mA

10

15

 

mW

Radiation power

Po

IF = 150 mA

35

45

 

Mw

Radiation intensity

Ie

IF = 60 mA

3.5

6.5

 

Mw/sr

Radiation intensity

Ie

IF = 150 mA

10

15

 

Mw/sr

peak wavelenth

λP

IF = 60 mA

800

810

820

nm

Half Width

Δλ

IF = 60 mA

 

30

 

nm

50%Power Angle

φ

IF = 60 mA

 

120

 

deg

Switching Time

tr, tf

IF = 60 mA

 

40

 

ns