Description

IR5123C-112-3.6 is a infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages.In comparison with the standard GaAs on GaAs technology . These emitters achieve more than 100 % radiant power improvement at a similar wavelength .The forward voltages at low current and at high pulsecurrent roughly correspond to the lowvalues of thestandardtechnology.Therefore these emitters areideally suitable as high performance replacements ofstandard emitters.

Features

ü        Extra high radiant power and radiant intensity

ü        Angle of Intensity ±30 °

ü        High reliability

ü        Low forward voltage

ü        Suitable for high pulse current operation

ü        Standard (∮5 mm) package

ü        Peak wavelengthλ= 940 nm

ü        Good spectral matching to Si photodetectors

ü        Lead-free component

ü        Component in accordance to RoHS