大功率 LED芯片 BH-Y4242D-A1(黃光)双电 台湾光宏
价格:电议
地区:广东 深圳市
电 话:86 0755 29447660
传 真:86 0755 29563850/021-52360817
Scope

This specification applies to AlInGaP metal bonding 42 x 42mil yellow LED chip, BH-Y4242D-A1.

    
Materials

P-pad:Au alloy
N-pad:Au alloy

    
Dimensions

Chip size:1060±25μm x 1060±25μm.
P-pad:Ø120±10μm, thickness 3.5±0.3μm.
N-pad:Ø120±10μm, thickness 3.5±0.3μm.
Chip thickness:200μm±25μm.

 
Electro-optical characteristics and specification: (Tc=25°C)
Test parameterConditionMinTypMaxUnit
Dominant wavelength(Wd)350mA570-610nm
Luminous intensity(Iv)350mA4150-10000mcd
Forward voltage(Vf4)10uA1.3-2.5V
Forward voltage(Vf1)350mA1.8-2.6V
Reverse current (Ir)-10V0-2uA