深圳湾边贸易优势进口Amptek XR-100CR X射线探测器价格优惠!
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TheXR-100CRis a high performancex-ray detector,preamplifier, andcoolersystem using a thermoelectrically cooled Si-PIN photodiode as an x-ray detector. Also mounted on the 2-stage cooler are the input FET and a novel feedback circuit. These components are kept at approximately -55 °C, and are monitored by an internal temperature sensor. The hermetic TO-8 package of the detector has a light tight, vacuum tight thin Beryllium window to enable soft x-ray detection.

The XR-100CR represents a breakthrough in x-ray detector technology by providing "off-the-shelf" performance previously available only from expensive cryogenically cooled systems.

Features

  • Si-PIN Photodiode
  • 2-Stage Thermoelectric Cooler
  • Temperature Monitor
  • Beryllium Window
  • Multilayer Collimator
  • Hermetic Package (TO-8)
  • Wide Detection Range
  • Easy to Operate

Additional Information

  • Selection Guide
  • Additional Performance Spectra and Detector Properties
  • Application Spectra
  • Si-PIN vs. CdTe
  • Mechanical Dimensions
  • Multilayer Collimator
  • OEM & Custom Applications

Accessories

  • MP1 XRF Mounting Plate
  • Vacuum Applications
  • Collimator Kit (high flux applications)
  • Experimenter's XRF Kit

Applications

  • X-Ray Fluorescence
  • RoHS/WEEE
  • Portable Instruments
  • OEM
  • Nuclear Medicine
  • Teaching and Research
  • Art and Archaeology
  • Process Control
  • Mössbauer Spectrometers
  • Space and Astronomy
  • Environmental Monitoring
  • Nuclear Plant Monitoring
  • Toxic Dump Site Monitoring
  • PIXE


Figure 1.55Fe Spectrum taken with a 6 mm2/500 µm detector.

The resolution for the the 5.9 keV peak of55Fe is 145 eV FWHM to 230 eV FWHM depending on detector type and shaping time constant. SeeSelection Guide.


Theory of Operation

X-rays interact with silicon atoms to create an average of one electron/hole pair for every 3.62 eV of energy lost in the silicon. Depending on the energy of the incoming radiation, this loss is dominated by either the Photoelectric Effect or Compton scattering. The probability or efficiency of the detector to "stop" an x-ray and create electron/hole pairs increases with the thickness of the silicon.See efficiency curves.

In order to facilitate the electron/hole collection process, a 100-200 volt bias voltage is applied across the silicon depending on the detector thickness. This voltage is too high for operation at room temperature, as it will cause excessive leakage, and eventually breakdown. Since the detector in the XR-100CR is cooled, the leakage current is reduced considerably, thus permitting the high bias voltage. This higher voltage decreases the capacitance of the detector, which lowers system noise.

The thermoelectric cooler cools both the silicon detector and the input FET transistor to the charge sensitive preamplifier. Cooling the FET reduces its leakage current and increases the transconductance, both of which reduce the electronic noise of the system.

Since optical reset is not practical when the detector is a photodiode, the XR-100CR incorporates a novel feedback method for the reset to the charge sensitive preamplifier. The reset transistor, which is typically used in most other systems has been eliminated. Instead, the reset is done through the high voltage connection to the detector by injecting a precise charge pulse through the detector capacitance to the input FET. This method eliminates the noise contribution of the reset transistor and further improves the energy resolution of the system.

A temperature monitor diode chip is mounted on the cooled substrate to provide a direct reading of the temperature of the internal components, which will vary with room temperature. Below -20 癈, the performance of the XR-100CR will not change with a temperature variation of a few degrees. Hence, closed loop temperature control is not necessary when using the XR-100CR at normal room temperature. For OEM applications or hand held XRF instrumentation a closed loop temperature control is recommended. The Active Temperature Control is standard in Amptek electronics such as the PX5 and DP5/PC5.


 

XR100-CR Specifications

General
Detector TypeSi-PIN
Detector Sizes6 mm2(collimated to 4.4 mm2)
13 mm2(collimated to 11.1 mm2)
25 mm2(collimated to 21.5 mm2)
See Selection Guide
Silicon Thickness500 µmSee efficiency curves
CollimatorMultilayer,click here for more information
Energy Resolution @ 5.9 keV (55Fe)145 eV FWHM to 230 eV FWHM depending on detector type and shaping time constant.
See Selection Guide
Background Counts<5 x 10-3/s, 2 keV to 150 keV for 6 mm2/500 µm detector
Detector Be Window Thickness1 mil (25 µm),or 0.5 mil (12.5 µm),See transmission curves
Charge Sensitive PreamplifierAmptek custom design with reset through the H.V. connection
Gain Stability<20 ppm/°C (typical)
Case Size3.00 x 1.75 x 1.13 in (7.6 x 4.4 x 2.9 cm),See mechanical dimensions
Weight4.9 ounces (139 g)
Total Power<1 Watt
Warranty Period1 Year
Typical Device Lifetime5 to 10 years, depending on use
Operation conditions0°C to +40°C
Storage and ShippingLong term storage: 10+ years in dry environment
Typical Storage and Shipping: -20°C to +50°C, 10 to 90% humidity non condensing
TUV Certification
Certificate #: CU 01
Tested to: UL 61010-1: 2004 R7 .05
CAN/CSA-C22.2 61010-1: 2004
Inputs
Preamp Power±8 to 9 V @ 15 mA with no more than 50 mV peak-to-peak noise
Detector Power+180 V (power supply should be able to produce between +100 to 200 V @ 1 µA) very stable <0.1% variation
Cooler PowerCurrent = 350 mA maximum, voltage = 4 V maximum with <100 mV peak-to-peak noise
Note: the XR-100CR includes its own temperature controller