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二、主要技术指标

1)Frequency Range 频率范围:1.00-200.00MHz

2.5MHz,3.2MHz,4.608MHz,4.096MHz,5MHz,5.12MHz,6.4MHz,6.5MHz,6.72996MHz,
8.192MHz,9.216MHz,10MHz,10.24MHz,12MHz,12.24MHz,12.288MHz,12.8MHz,13MHz,14.4MHz,

14.7456MHz,14.85MHz,16MHz,16.32MHz,16.368MHz ,16.384MHz,16.8MHz,17MHz,

18.432MHz,19.2MHz,19.44MHz,19.68MHz,19.7985MHz,19.8MHz,20MHz,20.46MHz,20.48MHz,

20.82857MHz,24MHz,24.576MHz,25MHz,25.6MHz,26MHz,26.451788MHz,27MHz,29.952MHz,

32MHz,32.768MHz,33MHz,36.864MHz,38MHz,38.88MHz,40MHz,50MHz,61.44MHz,77.76MHz,
100MHz,120MHz,122.88MHz,140MHz,160MHz,180MHz,200MHz

2)Initial Calibration 频率准确度: A ≤±1.0ppm @25   ≤±0.5ppm @25 

3)Frequency Adjustment 频率调整:  1 Ageing adjustment: ≥ ±5ppm 

                                  2 No frequency adjustment

4)Operating Temperature 工作温度范围: C  -20-+70  D  -40-+85  E  -55-+105 

5)Frequency Stability 温度频率稳定度:F  ±0.28ppm  G  ±0.5ppm   H  ±1.0ppm

                                     I  ±1.5ppm   J  ±2.0ppm   K ±2.5ppm

6)Output Waveform 输出波形: 1 Sine 正弦波 2 Hcmos 方波 3 Clipped Sine 削峰正弦波

7)Supply Voltage 工作电压范围: L 3.3V±10%  M 5.0V±10%

8)Ageing 频率老化率±1ppm maximum in first year,±3ppm maximum for 10 years

 

9)Phase Noise 相位噪声:

Frequency

10Hz

100Hz

1kHz

10kHz

100kHz

13.0MHz

–95 dBc/Hz

–120dBc/Hz

–135dBc/Hz

–140dBc/Hz

–145dBc/Hz

 

10)Package Outline 封装、尺寸:

N DIP 21*13*5mm   O DIP 18*12*5mm  P DIP 20*20*10mm      Q DIP 36*27*16mm

R SMD 5*3*1mm     S SMD 7*5*2mm    T SMD 9*7*3mm         U SMD 14*9*6mm


 

11)Storage Temperature 储存温度范围: -55-+125

 

三、产品定型 RTT-10MHZ-B 2 D G 1 M S

 

频率

准确度

频率调整

温度范围

稳定性

波形

电压

尺寸

RTT

10

B

2

D

G

1

M

S

 

RTT

 

10MHZ

±0.5ppm

@25

Nofrequency adjustment

-40-+85

±0.5ppm

 

Sine

 

5.0V

SMD

7*5*2mm



封装

尺寸

电压

频率

MHz

稳定性

工作温度

输出波形

TCXOs SMD

11 x 9mm

3.0V

9.6 to 40

MHz

±2.5ppm  ±5ppm

-30 to 75°C

Clipped Sine

TCXOs SMD

7 x 5mm

3.0V

10 to 26

MHz

±1.5ppm ±2ppm ±2.5ppm

-40 to 85°C

Clipped Sine

TCXOs SMD

7 x 5mm

3.3V

10 to 40

MHz

±0.9ppm

-20 to 70°C

HCMOS

TCXOs SMD

5 x 3mm

3.0V

16 to 33.6

MHz

±0.5ppm

-40 to 85°C

Clipped Sine

TCXOs SMD

5 x 3mm

3.0V

10 to 30

MHz

±1.5ppm ±2ppm ±2.5ppm

-40 to 85°C

Clipped Sine

TCXOs SMD

7 x 5mm

3.3V

10 to 40

MHz

±0.9ppm

-20 to 70°C

HCMOS

TCXOs SMD

7 x 5mm

3.3V

10 to 40

MHz

±0.5ppm

-40 to 85°C

HCMOS

TCXOs SMD

7 x 5mm

5.0V

1.25 to 40

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-40 to 85°C

Square HCOMS

TCXOs SMD

7 x 5mm

5.0V

10 to 40

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-40 to 85°C

Square HCOMS

TCXOs SMD

7 x 5mm

5.0V

10 to 40

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-40 to 85°C

Square HCOMS

TCXOs SMD

7 x 5mm

3.3V

1.25 to 40

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-40 to 85°C

Square HCOMS

TCXOs SMD

7 x 5mm

3.3V

10 to 40

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-40 to 85°C

Square HCOMS

TCXOs SMD

7 x 5mm

3.3V

10 to 40

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-40 to 85°C

Clipped Sine

TCXOs SMD

14.1 x 9.1mm

5.0V

1 to 50

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55 to 105°C

Square HCOMS

TCXOs SMD

14.1 x 9.1mm

5.0V

8 to 50

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55 to 105°C

Sine

TCXOs SMD

14.1 x 9.1mm

5.0V

1 to 80

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55 to 105°C

Square ACMOS

TCXOs SMD

14.1 x 9.1mm

5.0V

8 to 50

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55 to 105°C

Clipped Sine

TCXOs SMD

14.1 x 9.1mm

3.3V

1 to 50

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55 to 105°C

Square HCOMS

TCXOs SMD

14.1 x 9.1mm

3.3V

8 to 50

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55 to 105°C

Sine

TCXOs SMD

14.1 x 9.1mm

3.3V

1 to 80

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55 to 105°C

Square ACMOS

TCXOs SMD

14.1 x 9.1mm

3.3V

8 to 50

MHz

±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55 to 105°C

Clipped Sine

TCXOs SMD

5 x 3mm

3.3V

1 to 52

MHz

±0.2ppm±0.3ppm

±0.5ppm ±1ppm ±2ppm

-40 to 85°C

Square HCOMS

TCXOs SMD

5 x 3mm

3.0V

12 to 52

MHz

±0.2ppm ±0.3ppm
±0.5ppm ±1ppm ±2ppm

-40 to 85°C

Clipped Sine



 

VC-TCXO       TCXO

Size(mm)

SMD 5.0X3.2X1.05 mm

Output Frequency Range

10MHz - 40 MHz

Supply Voltage (Vdd)

 +3.3V

Current Consumption

+1.2mA ≤15MHz  +1.4mA 15-26MHz  +1.6mA >26MHz

Output Level

0.8Vp-p min. Clipped sinewave/ DC-coupled 10kΩ // 10pF

Freq Stability Tolerance

≤±1.5ppm    (with frequency adjustment)

Vs. Temperature

H: ≤±1.0ppm  D:-40-+85°C  G: ≤±0.5ppm  D: -40-+85°C

Vs. Supply Voltage

≤±0.2ppm

Vs. Load Variation

≤±0.2ppm

Vs.Aging

≤±1.0ppm/year

Frequency Control

±3.0ppm-±5.0ppm/+1.5+-1V

Phase Noise

≤15MHz              15-26MHz             >26MHz

-115dBc/Hz@100Hz   -110dBc/Hz@100Hz   -105dBc/Hz@100hz

-135dBc/Hz@1KHz    -130dBc/Hz@1KHz    -125dBc/Hz@1Khz

-145dBc/Hz@10KHz   -140dBc/Hz@10KHz   -135dBc/Hz@10Khz

-145dBc/Hz@100KHz  -145dBc/Hz@100KHz  -145dBc/Hz@100Khz

 

 























                      
VC-TCXO       TCXO

Size(mm):   DIP 25.0X15.0X10.0mm   DIP 21.0X13.0X7.0mm

Output Frequency Range: 1MHz - 200 MHz            1MHz - 30 MHz

Supply Voltage (Vdd):  +3.3VDC   +5VDC   +12VDC

Current Consumption: +10mA 

Output Level:Sinewave  HCMOS   TTL    Clipped Sinewave

Freq Stability Calibration: ≤±0.5ppm    (with frequency adjustment)

Vs. Temperature: ≤±0.2ppm  ≤±0.3ppm  ≤±0.4ppm  ≤±0.5ppm  ≤±1.0ppm
               -10-+60°C   -20-+70°C   -30-+70°C   -40-+85°C

Vs. Supply Voltage: ≤±0.1ppm
Vs. Load Variation: ≤±0.1ppm
Vs.Aging: ≤±1.0ppm/year
Frequency Control: ±3.0ppm/0-5V
Phase Noise: 10MHz            -130dBc/Hz@1KHz  



参数名称

技术指标

外形尺寸

DIP 13*13 * 6mm  18.3* 11.7 *9mm  21*13*7mm

输出

频率(f0)

1-200MHz

正弦波

输出幅度

+7 dBm Min.

杂散

-70 dBc Max.

谐波

-30 dBc Max.

负载(Load)

50Ω

方波

电平

HCMOS  

占空比

4555%

上升/下降时间

4 nS Max.

负载(Load)

4 TTL

 

温度特性(df/f0)

±1 ppm Max.    -2070℃

±2 ppm Max.    -4085℃

日老化率(df/f0)

±0.01 ppm Max.

频率稳定度

年老化率(df/f0)

±1 ppm Max.

电压特性(df/f0)

±0.1 ppm Max. Vs±5%

负载特性(df/f0)

±0.1 ppm Max. Load±10%

短稳(df/f0)

0.5 ppb Max.

相位

噪声

@10 Hz

-90 dBc/Hz Max.

@100 Hz

-110 dBc/Hz Max.

@1k Hz

-135 dBc/Hz Max.

@10k Hz

-140 dBc/Hz Max.

微调

电压

微调

牵引范围(df/f0)

±5 ppm Min.

控制电压范围

1.5±1.0 VDC / 2.5±2.5 VDC

线性度

±10% Max.

输入阻抗

20kΩ Min.

功耗

工作电压(Vs)

+3.3 VDC   +5 VDC

工作电流

8 mA



 

2.5MHz,3.2MHz,4.608MHz,4.096MHz,5MHz,5.12MHz,6.4MHz,6.5MHz,6.72996MHz,8.192MHz,
9.216MHz,10MHz,10.24MHz,12MHz,12.24MHz,12.288MHz,12.8MHz,13MHz,14.4MHz,

14.7456MHz,14.85MHz,16MHz,16.32MHz,16.368MHz ,16.384MHz,16.8MHz,17MHz,

18.432MHz,19.2MHz,19.44MHz,19.68MHz,19.7985MHz,19.8MHz,20MHz,20.46MHz,20.48MHz,

20.82857MHz,24MHz,24.576MHz,25MHz,25.6MHz,26MHz,26.451788MHz,27MHz,29.952MHz,

32MHz,32.768MHz,33MHz,36.864MHz,38MHz,38.88MHz,40MHz,50MHz,61.44MHz,77.76MHz,
100MHz,120MHz,122.88MHz,140MHz,160MHz,180MHz,200MHz

 

温补晶振 TCXO 10MHz  ±0.5ppm, 40℃~ +85℃, 5.0V, sine输出不带频率调整,封装SMD 7×5×2mm

温补晶振 TCXO 10MHz  ±0.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5×2mm

温补晶振 TCXO 10MHz  ±0.5ppm, 40℃~ +85℃, 3.3V, sine输出带频率调整,封装SMD 7×5×2mm

温补晶振 TCXO 10MHz  ±0.5ppm, 40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 10MHz  ±1.0ppm, 20℃~ +70℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5×2mm

温补晶振 TCXO 10MHz  ±1.5ppm, 40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 10MHz  ±2.0ppm, 40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 10MHz  ±2.5ppm, 40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 10MHz  ±1.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 10MHz  ±2.0ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 10MHz  ±2.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 10MHz  ±1.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm

温补晶振 TCXO 10MHz  ±2.0ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm

温补晶振 TCXO 10MHz  ±2.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm

 

温补晶振 TCXO 20MHz  ±0.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5×2mm

温补晶振 TCXO 20MHz  ±0.5ppm, 40℃~ +85℃, 3.3V, sine输出不带频率调整,封装SMD 7×5×2mm

温补晶振 TCXO 20MHz  ±0.5ppm, 40℃~ +85℃, 3.3V, sine输出带频率调整,封装SMD 7×5×2mm

温补晶振 TCXO 20MHz  ±0.5ppm, 40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 20MHz  ±1.0ppm, 20℃~ +70℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5×2mm

温补晶振 TCXO 20MHz  ±1.5ppm, 40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 20MHz  ±2.0ppm, 40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 20MHz  ±2.5ppm, 40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO20MHz  ±1.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 20MHz  ±2.0ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 20MHz  ±2.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 20MHz  ±1.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm

温补晶振 TCXO 20MHz  ±2.0ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm

温补晶振 TCXO 20MHz  ±2.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm

 

温补晶振 TCXO 40MHz  ±0.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5×2mm

温补晶振 TCXO 40MHz  ±0.5ppm, 40℃~ +85℃, 3.3V, sine输出不带频率调整,封装SMD 7×5×2mm

温补晶振 TCXO 40MHz  ±0.5ppm, 40℃~ +85℃, 3.3V, sine输出带频率调整,封装SMD 7×5×2mm

温补晶振 TCXO 40MHz  ±0.5ppm, 40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 40MHz  ±1.0ppm, 20℃~ +70℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5×2mm

温补晶振 TCXO 40MHz  ±1.5ppm, 40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 40MHz  ±2.0ppm, 40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 40MHz  ±2.5ppm, 40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 40MHz  ±1.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 40MHz  ±2.0ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 40MHz  ±2.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm

温补晶振 TCXO 40MHz  ±1.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm

温补晶振 TCXO 40MHz  ±2.0ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm

温补晶振 TCXO 40MHz  ±2.5ppm, 40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm

 

Ractron,Citizen,C-mac,NDK,Rakon,Raltron,TDK,Vectron

 

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品牌/商标

Ractron,Citizen,Cmac,NDK,Rakon,Raltron,TDK,Ve

环保类别

无铅环保型

安装方式

直插式

主要用途

工业电子电气设备

频率准确度:

A ≤±1.0ppm @25℃ B ≤±0.5ppm @25℃

温度频率稳定度:

F ±0.28ppm G ±0.5ppm H ±1.0ppm I ±1.5ppm J ±2.0ppm K ±2.5ppm

输出波形:

1 Sine 正弦波 2 Hcmos 方波 3 Clipped Sine 削峰正弦波