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供应MOS IRF650B_FP001
价格:
电议
地区:
广东 深圳市
电 话:
86 755 88250321
手 机:
13902969450
传 真:
86 755 88257896
深圳市飞捷士科技有限公司
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Manufacturer:
Fairchild Semiconductor
RoHS:
No
Product:
General Purpose MOSFETs
Configuration:
Single
Package / Case:
TO-220
Transistor Polarity:
N-Channel
Drain-Source Breakdown Voltage:
200 V
Continuous Drain Current:
28 A
Power Dissipation:
156000 mW
Resistance Drain-Source RDS (on):
0.085 Ohm @ 10 V
Typical Fall Time:
195 ns
Typical Rise Time:
240 ns
Typical Turn-Off Delay Time:
295 ns
Packaging:
TUBE
Gate-Source Breakdown Voltage:
30 V
Maximum Operating Temperature:
150 C
Minimum Operating Temperature:
- 55 C
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