供应优质场效应管FDN335N/SP335N
价格:电议
地区:广东 东莞市
电 话:86 0769 85325785
手 机:13712458598
传 真:86 0769 85325785

 

General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.

Applications
• DC/DC converter
• Load switch

Features
• 1.7 A, 20 V. RDS(ON) = 0.07 W @ VGS = 4.5 V
    RDS(ON) = 0.100 W @ VGS = 2.5 V.
• Low gate charge (3.5nC typical).
• High performance trench technology for extremely
   low RDS(ON).
• High power and current handling capability.

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