SHANGHAI                                   June 2007

MICROELECTRONICSCO., LTD. 

SE2306 

N-Channel Enhancement Mode Field Effect Transistor

Features

●  V_DS= 20V,I_D= 6A

R_DS(ON)< 37.5mΩ @ V_GS=2.5V

R_DS(ON)< 27.5mΩ @ V_GS=4.5V

●High Power and current handing capability

●Lead free product is acquired

●Surface Mount Package

Applications 

●Load switch

●Power management

Construction 

●Silicon epitaxial planer

Absolute maximum ratings (Ta=25℃)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

V_DS

20

V

Gate-Source Voltage

V_GS

±10

V

Drain Current-Continuous@ Current-Pulsed (Note 1)

I_D

6

A

I_DM

25

A

Maximum Power Dissipation

P_D

1.5

W

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

℃

THERMAL CHARACTERISTICS

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

83

℃/W

Electrical characteristics (Ta=25℃)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF  CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V I_D=250μA

20

V

Zero Gate Voltage Drain Current

I_DSS

V_DS=20V,V_GS=0V

0.8

μA

Gate-Body Leakage Current

I_GSS

V_GS=±10V,V_DS=0V

±80

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V_GS(th)

V_DS=V_GS,I_D=250μA

0.45

0.65

1.2

V

Drain-Source On-State Resistance

R_DS(ON)

V_GS=4.5V, I_D=4.5A

21

27.5

mΩ

V_GS=2.5V, I_D=3.5A

30

37.5

mΩ

Forward Transconductance

g_FS

V_DS=5V,I_D=4.5A

3

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C_lss

V_DS=8V,V_GS=0V, F=1.0MHz

600

PF

Output Capacitance

C_oss

330

PF

Reverse Transfer Capacitance

C_rss

140

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t_d(on)

V_DD=10V,I_D=1A V_GS=4.5V,R_GEN=6Ω

10

20

nS

Turn-on Rise Time

t_r

11

25

nS

Turn-Off Delay Time

t_d(off)

35

70

nS

Turn-Off Fall Time

t_f

30

60

nS

Total Gate Charge

Q_g

V_DS=10V,I_D=6A,

V=4.5V

10

15

nC

Gate-Source Charge

Q_gs

2.3

nC

Gate-Drain Charge

Q_gd

3

nC

Diode Forward Voltage (Note 3)

V_SD

V=0V,I=1.7A

1.2

V

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