WFU1N60  TO-251  WISDOM，全新原装。

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

RDS(on) (Max 12.0 Ω )@VGS=10V
■ Gate Charge (Typical 4.5nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)