1SS187
1 2007-11-01
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS187
Ultra High Speed Switching Application
z Small package : SC-59
z Low forward voltage : VF (3) = 0.92V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 2.2pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 300 mA
Average forward current IO 100 mA
Surge current (10ms) IFSM 2 A
Power dissipation P 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
Characteristic Symbol
Test
Circuit Test Condition Min Typ Max Unit
VF (1) ― IF =1mA ― 0.61 ―
Forward voltage VF (2) ― IF = 10mA ― 0.74 ―
VF (3) ― IF = 100mA ― 0.92 1.20
V
IR (1) ― VR = 30V ― ― 0.1
Reverse current
IR (2) ― VR = 80V ― ― 0.5
μA
Total capacitance CT ― VR = 0, f = 1MHz ― 2.2 4.0 pF
Reverse recovery tme trr ― IF = 10mA (Fig.1) ― 1.6