全新原装IGBT 11A 1200V 60W N沟

变频电源专用!

INSULATED GATE BIPOLAR TRANSISTOR

Short Circuit Rated UltraFast IGBT

Features
Benefits
• High short circuit rating optimized for motor control,
  tsc =10µs,  VCC = 720V ,  TJ = 125°C,
  VGE = 15V
• Combines low conduction losses with high
  switching speed
• Latest generation design provides tighter parameter
  distribution and higher efficiency than previous
  generations
• As a Freewheeling Diode we recommend our
  HEXFREDTM ultrafast, ultrasoft recovery diodes for
  minimum EMI / Noise  and switching  losses in the
  Diode  and IGBT
• Latest generation 4 IGBT's offer highest power
  density motor controls possible