FGA25N120ANTD
1200V NPT Trench IGBT

全新原装进口 FSC仙童品牌 TO-3P封装 30只/管 450只/盒 3600只/箱

Features
•NPT Trench Technology, Positive temperature coefficient
•Low saturation voltage: VCE(sat), typ = 2.0V 
@ IC = 25A and TC = 25°C
•Low switching loss: Eoff, typ = 0.96mJ 
@ IC = 25A and TC = 25°C
•Extremely enhanced avalanche capability
Description
Using Fairchild's proprietary  trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven, etc.

Absolute Maximum Ratings
Symbol Description FGA25N120ANTD Units
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ± 20 V
IC Collector Current     @ TC =   25°C 50 A
Collector Current @ TC = 100°C 25 A
ICM Pulsed Collector Current  (Note 1) 90 A
IF Diode Continuous Forward Current @ TC = 100°C 25 A
IFM Diode Maximum Forward Current 150 A
PD Maximum Power Dissipation          @ TC =   25°C 312 W
Maximum Power Dissipation  @ TC = 100°C 125 W
TJ  Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC Thermal Resistance, Junction-to-Case for IGBT -- 0.4 °C/W
RθJC Thermal Resistance, Junction-to-Case for Diode -- 2.0 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W