FDT457N
 N-Channel Enhancement Mode Field Effect Transistor                                                                
                                                                                       
General  Description                                                                   Features
5 A, 30 V. RDS(ON)
 = 0.06 Ω @ VGS = 10 V                             
                 RDS(ON)
 = 0.090 Ω @ VGS = 4.5 V. 
High density cell design for extremely low RDS(ON)
.
High power and current handling capability in a widely used
surface mount package.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance. These products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.