供应 0.83芯片13003 TO-126图)(图)-维库仪器仪表网

产品详情大图

供应 0.83芯片13003 TO-126图)(图)

价格：电议

地区：广东深圳市

传真：86 0755 33060029

深圳市威国科技发展有限公司

免费会员营业执照未上传

全部产品进入商铺

厂家特价直销.欢迎来电咨询！

MJE13003 TRANSISTOR(NPN)

1:FEATURES

Power switching applications

2:MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

symbol	parameter	value	units
Vcbo	Collector-Base Voltage	600	V
Vceo	Collector-Emitter Voltage	450	V
Vebo	Emitter-Base Voltage	9	V
Ic	Collector Current-Continuous	0.3	A
Pc	Collector Power Dissipation	0.8	W
TJ	Junction Temperature	150	℃
Tstg	Storage Temperature	-55-150	℃

3:ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)cbo	IC=100uA IE=0	600			V
Collector-emitter breakdown voltage	V(BR)ceo	IC=1mA IB=0	450			V
Emitter-base breakdown voltage	V(BR)ebo	IE=100uA IC=0	9			V
Collector cut-off Current	Icbo	Vcb=600V IE=0			100	uA
Collector cut-off Current	Iceo	Vce=400V IB=0			200	uA
Emitter cut-off Current	Iebo	Veb=9V IC=0			100	uA
DC Current gain	hEF(1)	Vce=20VIC=20 mA	10		40
DC Current gain	hEF(2)	Vce=10VIC=0.25mA	5
Collector-emitter saturation voltage	VCE(sat)	IC=50mA IB=10 mA			0.5	V
Base -emitter saturation voltage	VBE(sat)	IC=50mA IB=10 mA			1.2	V
Transition frequency	fT	Vce=20VIC=20 mA f=1MHZ	8			MHZ
Fall time	tf	VCC=45V IC=50Ma IB1=-IB2=5mA			0.3	US
Storage time	ts	VCC=45V IC=50Ma IB1=-IB2=5mA			1.5	US

4:CLASSIFICATION OF hEF(1)

Rank
Range	15-18	18-20	20-23	23-25	25-28	28-30