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应用:节能灯,电子镇流器,电子变压器,开关电源。
特点:耐压高,开关速度快,安全工作区宽,符合ROHS规范。
芯片面积:2.52*2.52 欢迎来电咨询!
MJE13005 TRANSISTOR(NPN)
1:FEATURES
Power switching applications
2:MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
symbol | parameter | value | units |
Vcbo | Collector-Base Voltage | 700 | V |
Vceo | Collector-Emitter Voltage | 400 | V |
Vebo | Emitter-Base Voltage | 9 | V |
Ic | Collector Current-Continuous(DC) | 4 | A |
Ic | Collector Current-Continuous(Pulse) | 8 | A |
IB | Base Current | 2 | A |
Pc | Collector Power Dissipation | 75 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55-150 | ℃ |
3:ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)cbo | IC=1mA IE=0 | 700 |
|
| V |
Collector-emitter breakdown voltage | V(BR)ceo | IC=10mA IB=0 | 400 |
|
| V |
Emitter-base breakdown voltage | V(BR)ebo | IE=1mA IC=0 | 9 |
|
| V |
Collector cut-off Current | Icbo | Vcb=700V IE=0 |
|
| 1 | mA |
Collector cut-off Current | Iceo | Vce=400V IB=0 |
|
| 0.1 | mA |
Emitter cut-off Current | Iebo | Veb=9V IC=0 |
|
| 1 | mA |
DC Current gain | hEF(1) | Vce=5V IC=1A Vce=5V IC=2A | 10+ 8 |
| 40 40 |
|
Collector-emitter saturation voltage | VCE(sat) | IC=1A IB=0.2A IC=4A IB=1A |
|
| 0.5 1 | V |
Base -emitter saturation voltage | VBE(sat) | IC=2A IB=0.5A |
|
| 1.6 | V |
Transition frequency | fT | Vce=10VIC=500mA f=1MHZ | 4 |
|
| MHZ |
Fall time | tf | VCC=5V IC=0.5A UI9600 IC=0.5A |
|
| 0.8 | US |
Storage time | ts | 2 |
| 5 | US |
4:CLASSIFICATION OF hEF(1)
Rank |
|
|
|
|
|
|
|
|
Range | 8-15 | 15-18 | 18-20 | 20-23 | 23-25 | 25-28 | 28-30 | 30-40 |
5:PIN ARRAY
1.BASE 2.COLLECTOR 3.EMITTER