SILICON TRANSISTOR
2SC3355

HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise
amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.

• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain
MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage             VCBO                  20 V
Collector to Emitter Voltage          VCEO                 12 V
Emitter to Base Voltage                VEBO                 3.0 V
Collector Current                           IC                     100 mA
Total Power Dissipation                PT                      600 mW
Junction Temperature                   Tj                       150 C
Storage Temperature                    Tstg                 65 to +150 C

供应肖特基二极管:
1N5822   3A 40V  DO-27/DO-201AD
整流直插:
1N4001-1N4007 1N5391-1N5399  RL205-RL207  1N5401-1N5408  6A01-6A10 10A01-10A10
快速管直插：
FR103-FR107  FR153-FR157  FR204-FR207  FR302-FR307  HER102-HER108 HER203-HER208 HER302-HER308 UF4004-UF4007  UF5402-UF5048
肖特基二极管:
1N5817-1N5819 SR120-SR1100 SR240-SR2100  SR320-SR3100  1N5820-1N5822  SR520-SR5100
整流贴片:
M1  M4  M7 S2M S2B S2M S3G S3M S3J S3A S2A
肖特基贴片:
SS12-SS14 SS24-SS210  SS34-SS310  MBRX120-MBRX140(1N5819 SOD-123)
快速管贴片:
RS1G-RS1M US1G-US1M   ES1G-ES1M  US2J  ES2J
稳压管直插 贴片：
0.5W2V-120V 1W3.3V-1W100V 2W3.3V-120V 5W3.3V-200V 2EZ6.8D5  2EZ12D5  2EZ24D5
三极管：
TL431 78L05-78L18 79L05-79L-13009 MCR100-6 MCR100-8 MAC97A6 MCA97A8 S8050 S9011-S9018
整流桥：
DB101-DB107 W04-W01 2W01-2W10 MB05S-MB10S DB101S-DB107S KBP201-KBP210 KBL401-KBL410 KBU601-KBU610 KBU801-KBU810
GBU601-GBU610 GBU801-GBU810 KBPC801-KBPC810 KBPC1501-KBPC1510 KBPC2501-KBPC2510 KBPC3501-KBPC3510 KBPC5001-KBPC5010