DATA SHEET
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan
1985?
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
? Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
? High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 G01C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 G01C
Storage Temperature Tstg G0265 to +150 G01C
ELECTRICAL CHARACTERISTICS (TA = 25 G01C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 1.0 G01AVCB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0 G01AVEB = 1.0 V, IC = 0
DC Current Gain hFE*0 VCE = 10 V, IC = 20 mA
Gain Bandwidth Product fT 7 GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance Cre** 0.55 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain G01S21eG01
2
11.5 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure NF 1.1 2.0 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* Pulse Measurement PW G03 350 G01s, Duty Cycle G03 2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
hFE Classification
Class R23/Q * R24/R * R25/S *
Marking R23 R24 R25
hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.2
1.1 to 1.4
0 to 0.1
0.95
0.3
0.95
0.4
+0.1 ?
0.05


0.4
+0.1 ?
0.05
0.16
+0.1 ?
0.06
0.65
+0.1
?0.15
123