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供应810NM贴片3528 红外发射管/nm infrared doide
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nm infrared doide

 

 

 

 

应用prications

电子设备的指示和背光

directives and backlight for Electronic products

各类光源应用

Light pipe application.

生长灯

Grow light

光电设备的信号传输

signal transmission of Photoelectric equipment

医疗设备

Medical equipment

 

 

   Absolute Maximum Rating            (Ta=25℃)

Item

Symbol

Value

Unit

DC forward current

IF

50

mA

Pulse forward current

IFP

100

mA

Power dissipation

PD

130

mW

Operating temperature

Topr

-40~+85

℃

Storage temperature

Ystg

-40~+80

℃

Reverse voltage

VR

5

V

Sold soldering temperature

Tsol

260℃/3Sec

---

Plus with Max 10ms,duty ratio max1/00

 

 

 

Electro-Optical Characteristics

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Forward Voltage

UF

IF = 20 mA

 

1.6

1.9

v

Forward Voltage *

UF

IF = 50 mA

 

1.7

 

v

DC reverse Current

IR

V=5V

  

10

μA

Radiation power

Po

IF = 20 mA

4

6

 

mW

Radiation power

Po

IF = 50 mA

16

18.5

 

Mw

Radiation intensity

Ie

IF = 20 mA

1.5

2

 

Mw/sr

Radiation intensity

Ie

IF = 50 mA

4

5.5

 

Mw/sr

peak wavelenth

λP

IF = 20 mA

800

810

820

nm

Half Width

Δλ

IF = 20 mA

 

30

 

nm

50%Power Angle

φ

IF = 20 mA

 

120

 

deg

Switching Time

tr, tf

IF = 20 mA

 

40

 

ns